STPS16170CB datasheet(3/10 Pages) STMICROELECTRONICS

No. de pieza	STPS16170CB

Descripción Electrónicos	High voltage power Schottky rectifier

PDF	10 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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STPS16170C

Characteristics

3/10

Figure 1.

Conduction losses versus average

forward current (per diode)

Figure 2.

Average forward current versus

ambient temperature (

δ = 0.5, per

diode)

F(AV)(W)

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

δ=tp/T

IF(AV)(A)

100

125

150

175

Tamb(°C)

(A)

F(av)

Rth(j-a)=Rth(j-c)

Rth(j-a)=15°C/W

δ=tp/T

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

Figure 5.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

Figure 6.

Relative variation of thermal

impedance junction to case versus

pulse duration

100

120

1.E-03

1.E-02

1.E-01

1.E+00

M(A)

C=50°C

C=75°C

C=125°C

δ =0.5

t(s)

0.1

1.0

1.E-03

1.E-02

1.E-01

1.E+00

th(j-c)/Rth(j-c)

Single pulse

TO-220AB

DPAK

I²PAK

D²PAK

tp(s)

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