PD84008L-E datasheet(1/14 Pages) STMICROELECTRONICS

No. de pieza	PD84008L-E

Descripción Electrónicos	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

PDF	14 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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Preliminary Data

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

March 2008

Rev 2

1/14

14

PD84008L-E

RF power transistor, LdmoST plastic family

N-channel enhancement-mode lateral MOSFETs

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 8 W with 13 dB gain @ 870 MHz / 7.5 V

■ Plastic package

■ ESD protection

■ In compliance with the 2002/95/EC european

directive

Description

The is a common source N-channel,

enhancement-mode lateral Field-Effect RF power

transistor. It is designed for high gain, broadband

commercial and industrial applications. It

operates at 7.5 V in common source mode at

frequencies of up to 1 GHz. boasts the excellent

gain, linearity and reliability of ST’s latest LDMOS

technology mounted in leadless SMD plastic RF

power package , PowerFLAT™.

Figure 1.

Pin connection

PowerFLATTM (5 mm x 5 mm)

Table 1.

Device summary

Order code

Marking

Package

Packing

PD84008L-E

84008

PowerFLATTM

Tape and reel

www.st.com

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PD84008L-E Datasheet(PDF) 1 Page - STMicroelectronics

PD84008L-E Datasheet(HTML) 1 Page - STMicroelectronics

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