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DMD1012 Datasheet(PDF) 2 Page - Seme LAB

No. de pieza DMD1012
Descripción Electrónicos  ROHS COMPLIANT METAL GATE RF SILICON FET
PDF  2 Pages
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Fabricante Electrónico  SEME-LAB [Seme LAB]
Página de inicio  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

DMD1012 Datasheet(HTML) 2 Page - Seme LAB

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DMD1012
DMD1012-A
Document Number 7346
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
70
3
1
17
2.4
0.1
13
50
20:1
180
90
7.5
VGS = 0
ID = 100mA
VDS = 28V
VGS = 0
VGS = 20V
VDS = 0
ID = 10mA
VDS = VGS
VDS = 10V
ID = 3A
ID = 10mA
VDS = VGS
PO = 100W
VDS = 28V
IDQ = 1.2A
f = 500MHz
VDS = 28V
VGS = –5V f = 1MHz
VDS = 28V
VGS = 0
f = 1MHz
VDS = 28V
VGS = 0
f = 1MHz
V
mA
μA
V
mhos
V
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Gate Threshold Voltage
Matching Between Sides
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RTHj–case
Thermal Resistance Junction – Case
Max. 0.35°C / W
0.6 °C / W -A Version
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
μs , Duty Cycle ≤ 2%
TOTAL DEVICE
PER SIDE
PER SIDE
BVDSS
IDSS
IGSS
VGS(th)
gfs
VGS(th)match
GPS
η
VSWR
Ciss
Coss
Crss



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