SILICON PLANAR EPITAXIAL

NPN TRANSISTOR

BSS71

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 8576

Issue 1

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

V(BR)CEO

(1)

Collector-Emitter

Breakdown Voltage

IC = 10mA

IB = 0

200

V(BR)CBO

Collector-Base

Breakdown Voltage

IC = 100µA

IE = 0

200

V(BR)EBO

Emitter-Base Breakdown

Voltage

IE = 100µA

IC = 0

6

V

ICBO

Collector Cut-Off Current

VCB = 150V

IE = 0

50

ICEO

Collector Cut-Off Current

VCE = 150V

IB = 0

500

IEBO

Emitter Cut-Off Current

VEB = 5V

IC = 0

50

nA

IC = 0.1mA

VCE = 1.0V

20

IC = 1.0mA

VCE = 10V

30

IC = 10mA

VCE = 10V

50

hFE

(1)

Forward-current transfer

ratio

IC = 30mA

VCE = 10V

40

250

IC = 10mA

IB = 1.0mA

0.3

IC = 30mA

IB = 3mA

0.4

VCE(sat)

(1)

Collector-Emitter Saturation

Voltage

IC = 50mA

IB = 5mA

0.5

IC = 10mA

IB = 1.0mA

0.8

IC = 30mA

IB = 3mA

0.9

VBE(sat)

(1)

Base-Emitter Saturation

Voltage

IC = 50mA

IB = 5mA

1.0

V

DYNAMIC CHARACTERISTICS

IC = 20mA

VCE = 20V

fT

Transition Frequency

f = 20MHz

50

200

MHz

VCB = 20V

IE = 0

Cobo

Output Capacitance

f = 1.0MHz

3.5

VEB = 0.5V

IC = 0

Cibo

Input Capacitance

f = 1.0MHz

45

pF

IC = 50mA

VCC = 100V

ton

Turn-On Time

IB1 = 10mA

100

IC = 50mA

VCC = 100V

toff

Turn-Off Time

IB1 = - IB2 = 10mA

400

ns

Notes

Notes

Notes

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%