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FC21 Datasheet(PDF) 2 Page - Sanyo Semicon Device

No. de pieza FC21
Descripción Electrónicos  High-Frequency Amplifier, AM tuner RF Amplifier Applications
PDF  5 Pages
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Fabricante Electrónico  SANYO [Sanyo Semicon Device]
Página de inicio  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

FC21 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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FC21
No.7021-2/5
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[FET]
Gate-to-Drain Breakdown Voltage
V(BR)GDS
IG=--10µA, VDS=0
--40
V
Gate Cutoff Current
IGSS
VGS=--20V, VDS=0
--1.0
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=100µA
--2.0
--3.0
--5.0
V
Drain Current
IDSS
VDS=10V, VGS=0
40*
75*
mA
Forward Transfer Admittance
yfs
VDS=10V, VGS=0, f=1kHz
22
30
mS
Input Capacitance
Ciss
VDS=10V, VGS=0, f=1MHz
11
pF
Reverse Transfer Capacitance
Crss
VDS=10V, VGS=0, f=1MHz
2.5
pF
Noise Figure
NF
VDS=10V, Rg=1kΩ, ID=1mA, f=1kHz
1.5
dB
[TR]
Collector Cutoff Current
ICBO
VCB=35V, IE=0
0.1
µA
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
0.1
µA
DC Current Gain
hFE
VCE=6V, IC=1mA
135
600
Gain-Bandwidth Product
fT
VCE=6V, IC=10mA
100
MHz
Output Capacitance
Cob
VCB=6V, f=1MHz
3
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=50mA, IB=5mA
0.1
0.5
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=50mA, IB=5mA
0.8
1.0
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10µA, IE=0
55
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10µA, IC=0
6
V
* : The FC21 is classified by IDSS as follows : (unit : mA)
Electrical Connection
Rank
JK
L
IDSS
40 to 52
48 to 63
57 to 75
The specifications shown above are for each individual FET or transistor.
0
100
80
60
40
20
0
ID -- VGS
Gate-to-Source Voltage, VGS -- V
ID -- VGS
Gate-to-Source Voltage, VGS -- V
--6
--5
--4
--3
--2
--1
0
100
80
60
40
20
--6
--4
--5
--3
--2
--1
0
80
40
20
60
0
04
8
20
12
16
ID -- VDS
Drain-to-Source Voltage, VDS -- V
80
60
40
20
0
0
1
234
5
ID -- VDS
Drain-to-Source Voltage, VDS -- V
ITR01960
ITR01961
ITR01963
ITR01964
VGS=0
--0.5V
--1.0V
--2.0V
--2.5V
--3.0V
VGS=0
--0.5V
--1.0V
--2.0V
--2.5V
--3.0V
--1.5V
--1.5V
VDS=10V
VDS=10V
IDSS=60mA
75
°C
[FET]
[FET]
[FET]
[FET]
B
S
CG
E / D



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