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FC21 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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FC21 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 5 page ![]() FC21 No.7021-2/5 Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit [FET] Gate-to-Drain Breakdown Voltage V(BR)GDS IG=--10µA, VDS=0 --40 V Gate Cutoff Current IGSS VGS=--20V, VDS=0 --1.0 nA Cutoff Voltage VGS(off) VDS=10V, ID=100µA --2.0 --3.0 --5.0 V Drain Current IDSS VDS=10V, VGS=0 40* 75* mA Forward Transfer Admittance yfs VDS=10V, VGS=0, f=1kHz 22 30 mS Input Capacitance Ciss VDS=10V, VGS=0, f=1MHz 11 pF Reverse Transfer Capacitance Crss VDS=10V, VGS=0, f=1MHz 2.5 pF Noise Figure NF VDS=10V, Rg=1kΩ, ID=1mA, f=1kHz 1.5 dB [TR] Collector Cutoff Current ICBO VCB=35V, IE=0 0.1 µA Emitter Cutoff Current IEBO VEB=4V, IC=0 0.1 µA DC Current Gain hFE VCE=6V, IC=1mA 135 600 Gain-Bandwidth Product fT VCE=6V, IC=10mA 100 MHz Output Capacitance Cob VCB=6V, f=1MHz 3 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=50mA, IB=5mA 0.1 0.5 V Base-to-Emitter Saturation Voltage VBE(sat) IC=50mA, IB=5mA 0.8 1.0 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=10µA, IE=0 55 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 6 V * : The FC21 is classified by IDSS as follows : (unit : mA) Electrical Connection Rank JK L IDSS 40 to 52 48 to 63 57 to 75 The specifications shown above are for each individual FET or transistor. 0 100 80 60 40 20 0 ID -- VGS Gate-to-Source Voltage, VGS -- V ID -- VGS Gate-to-Source Voltage, VGS -- V --6 --5 --4 --3 --2 --1 0 100 80 60 40 20 --6 --4 --5 --3 --2 --1 0 80 40 20 60 0 04 8 20 12 16 ID -- VDS Drain-to-Source Voltage, VDS -- V 80 60 40 20 0 0 1 234 5 ID -- VDS Drain-to-Source Voltage, VDS -- V ITR01960 ITR01961 ITR01963 ITR01964 VGS=0 --0.5V --1.0V --2.0V --2.5V --3.0V VGS=0 --0.5V --1.0V --2.0V --2.5V --3.0V --1.5V --1.5V VDS=10V VDS=10V IDSS=60mA 75 °C [FET] [FET] [FET] [FET] B S CG E / D |
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