BSO150N03 datasheet(2/9 Pages) INFINEON

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BSO150N03

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance,

junction - soldering point

R thJS

K/W

Thermal resistance,

junction - ambient

R thJA

minimal footprint,

t p≤10 s

110

minimal footprint,

steady state

150

6 cm

2 cooling area2),

t p≤10 s

6 cm

2 cooling area2),

steady state

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

Gate threshold voltage

V GS(th)

V DS=V GS, I D=25 µA

1.2

1.6

Zero gate voltage drain current

I DSS

V DS=30 V, V GS=0 V,

T j=25 °C

0.1

µA

V DS=30 V, V GS=0 V,

T j=125 °C

100

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

100

Drain-source on-state resistance

R DS(on)

V GS=4.5 V, I D=8.4 A

15.2

Ω

V GS=10 V, I D=9.1 A

12.5

Gate resistance

R G

1.5

Ω

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=9.1 A

3) See figure 3

2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Values

1)J-STD20 and JESD22

Rev. 1.7

page 2

2010-05-11

BSO150N03 Datasheet(PDF) 2 Page - Infineon Technologies AG

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