MRF24WB0MASLASHRM datasheet(25/34 Pages) MICROCHIP

25 / 34 page

 2010 Microchip Technology Inc.

Preliminary

DS70632A-page 25

MRF24WB0MA/MRF24WB0MB

4.0

ELECTRICAL

CHARACTERISTICS

Note 1:

Listed Absolute Maximum Ratings are not meant for functional operation. Operation at these levels is not

guaranteed, and may reduce the operating life of the component.

Note 1:

Operation in EU and/or Japan over extended voltage range of 2.7V to 3.6V will require additional

certification testing by customer. The module is capable of this operation.

While 3.63V is the maximum operating voltage, the module will detect an overvoltage condition at 4.2V and

disable the RF Transmit function in 0.5 ms. This is an RF certification behavior pertaining to disabling

transmission in unforeseen overvoltage conditions.

TABLE 4-1:

DIGITAL ELECTRICAL CHARACTERISTICS (NOMINAL CONDITIONS: 25C,

VDD = 3.3V)

Parameters

Min

Typ

Max

Units

VIL (Input low voltage)

-0.3

0.8

VIH (Input high voltage)

5.5

VOL (Output low voltage)

0.4

VOH (Output high voltage)

2.4

IOL (Output low level current at VOL Max)

8.5

IOH (Output high level current at VOH Min)

15.4

TABLE 4-2:

ABSOLUTE MAXIMUM RATINGS(1)

Parameters

Min

Max

Notes

Storage Temperature

-40C

+125C

VDD

4.2V for 0.5mSec VDD above this level and duration will disable Radio

VIN on SDI, CS, SCK

-0.3V

5.5V

TABLE 4-3:

RECOMMENDED OPERATING CONDITIONS

Parameters

Min

Typ

Max

Units

Ambient Temperature

+70

Degrees Celsius

VDD – for FCC and IC

2.70

3.3

3.63(2)

Volts

VDD – for ETSI(1)

2.80

3.3

3.63(2)

Volts

VDD – for Japan(1)

2.97

3.3

3.63(2)

Volts

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