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Die Characteristics

DIE DIMENSIONS:

1500

µm x 1830µm (59 mils x 72 mils)

Thickness: 483

µm ±25.4µm (19 mils ±1 mil)

INTERFACE MATERIALS

Glassivation

Nitride Thickness: 4.0kÅ

±1.0kÅ

Silox Thickness: 12.0kÅ

±4.0kÅ

Top Metallization

Top Metal 3: TiAlCu

Thickness: 0.8

µm ±0.02µm

Metal 1 and 2: TiAlCu

Thickness: 0.4

µm ±0.01µm

Substrate:

UHF2X-CMOS

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION

Substrate Potential:

Backside internally connected to GND

(May be left floating or connected to GND.)

ADDITIONAL INFORMATION

Worst Case Current Density:

Metallization Mask Layout

IS-705RH

NOTES:

1. Octagonal trim pads should be left unconnected.

VCC (2)

GND (3)

PFI (4)

PFO (5)

WDI (6)

RESET (7)

WDO (8)

MR (1)

IS-705RH