3

Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications

at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by

Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any

infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any

patent or patent rights of Intersil or its subsidiaries.

FN6475.3

November 12, 2009

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Die Characteristics

DIE DIMENSIONS:

52.8 mils x 52.0 mils x 14 mils ±1 mil

1340μm x 1320µm x 355.6µm ±25.4µm

INTERFACE MATERIALS:

Glassivation:

Type: Nitride

Thickness: 4k

Top Metallization:

Type: Metal 1: AlCu (2%)/TiW

Thickness: Metal 1: 8k

Type: Metal 2: AlCu (2%)

Thickness: Metal 2: 16k

Substrate:

UHF-1X Bonded Wafer, DI

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION:

Substrate Potential:

Floating

ADDITIONAL INFORMATION:

Worst Case Current Density:

Transistor Count:

5

Metallization Mask Layout

FIGURE 1. ISL73096RH, ISL73127RH

(1) Q1C

(2) Q2C

(3) Q2E

(4) Q2B

(5) NC

(6) Q3C

(7) Q3E (8) Q3B (9) Q4B(10) Q4E

(11) Q4

(12) Q5

(13) Q5

(14) Q5

(15) Q1B

(16) Q1E

ISL73096RH, ISL73127RH, ISL73128RH