23X256

DS22100E-page 2

 2010 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

Storage temperature .................................................................................................................................-65°C to 150°C

Ambient temperature under bias ...............................................................................................................-40°C to 125°C

ESD protection on all pins ...........................................................................................................................................2kV

TABLE 1-1:

DC CHARACTERISTICS

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an

extended period of time may affect device reliability.

DC CHARACTERISTICS

Industrial (I):

Param.

No.

Sym.

Characteristic

Min.

Max.

Units

Test Conditions

D001

Supply voltage

1.5

—

1.95

V

23A256 (I-Temp)

D001

Supply voltage

2.7

—

3.6

V

23K256 (I,E-Temp)

D002

High-level input

voltage

+0.3

V

D003

Low-level input

voltage

-0.3

—

V

D004

Low-level output

voltage

——

0.2

V

D005

High-level output

voltage

—

—

V

A

D006

Input leakage

current

——

±0.5

D007

Output leakage

current

——

±0.5

D008

Operating current

—

—

—

—

—

—

3

6

10

mA

mA

mA

D009

Standby current

—

—

—

0.2

1

5

1

4

10

A

A

A

D010

Input capacitance

7

pF

(Note 1)

D011

RAM data retention

—1.2

—

V

Note 1:

This parameter is periodically sampled and not 100% tested. Typical measurements taken at room

temperature (25°C).

2:

sampled and not 100% tested.