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KM416RD8AS-RBM80 Datasheet(PDF) 36 Page - Samsung semiconductor

No. de pieza KM416RD8AS-RBM80
Descripción Electrónicos  128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package
PDF  64 Pages
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Fabricante Electrónico  SAMSUNG [Samsung semiconductor]
Página de inicio  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416RD8AS-RBM80 Datasheet(HTML) 36 Page - Samsung semiconductor

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Page 33
KM416RD8AS
Direct RDRAM™
Rev. 0.9 July 1999
Target
. .
Figure 29: CNFGB Register
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
DEVTYP2..0
= 000
BYT
B
SVER5..0
= ssssss
CORG4..0
= xxxxx
SPT
1
Control Register: CNFGB
Address: 02416
Read-only register.
BYT - Byte width. B=1 means the device reads and
writes 9-bit memory bytes. B=0 means 8 bits.
DEVTYP2..0 - Device type. DEVTYP = 000 means
that this device is an RDRAM.
SPT - Split-core. SPT=1 means the core is split, SPT=0 means it is not.
CORG4..0 - Core organization. This field specifies the number of bank (3,
4, 5, or 6 bits), row (9, 10, 11, or 12 bits), and column (5, 6, or 7 bits)
address bits. The encoding of this field will be specified in a later version of
this document.
SVER5..0 - Stepping version. Specifies the mask version number of this
device.
Figure 30: TEST Register
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Read/write register.
Reset value of TEST34 is zero (from SIO Reset)
This register are used for testing purposes. It must not
be read or written after SIO Reset.
Control Register: TEST34
Address: 02216
0
0
Figure 31: DEVID Register
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
0
DEVID4..DEVID0
0
0
0
0
0
0
0
0
0
0
Read/write register.
Reset value is undefined.
Device Identification register.
DEVID4..DEVID0 is compared to DR4..DR0,
DC4..DC0, and DX4..DX0 fields for all memory read
or write transactions. This determines which RDRAM
is selected for the memory read or write transaction.
Control Register: DEVID
Address: 04016



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