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KC73129MP Datasheet(PDF) 4 Page - Samsung semiconductor

No. de pieza KC73129MP
Descripción Electrónicos  1/3 INCH CCD IMAGE SENSOR FOR CCIR CAMERA
PDF  18 Pages
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Fabricante Electrónico  SAMSUNG [Samsung semiconductor]
Página de inicio  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KC73129MP Datasheet(HTML) 4 Page - Samsung semiconductor

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1/3 INCH CCD IMAGE SENSOR FOR CCIR CAMERA
KC73129MP
4
DC CHARACTERISTICS
CLOCK VOLTAGE CONDITIONS
Table 3. DC Characteristics
Item
Symbol
Min.
Typ.
Max.
Unit
Remark
Output amp drain voltage
VDD
14.55
15.0
15.45
V
Output amp gate voltage
VGG
1.75
2.0
2.25
V
Output amp source voltage
VSS
Ground through 680
Ω
V
±5%
Substrate voltage adjustment range
SUB
7.0
14.5
V
Fluctuation range after substrate
voltage adjusted
∆V
SUB
-3
3
%
Protection circuit bias voltage
VL
VVL voltage of the vertical clock waveform
Output stage drain current
IDD
2.5
mA
Table 4. Clock Voltage Conditions
Item
Symbol
Min.
Typ.
Max.
Unit
Remark
Read-out clock voltage
VVT
14.55
15.0
15.45
V
High level
Vertical transfer clock voltage
VVH1 ~ VVH4
-0.05
0.0
0.05
V
VVH = (VVH1 + VVH2)/2
VVL1 ~ VVL4
-9.5
-9.0
-8.5
V
VVL = (VVL3 + VVL4)/2
Horizontal transfer clock voltage
VΦH
4.75
5.0
5.25
V
High
VHL
-0.05
0.0
0.05
V
Low
Charge reset clock voltage
VΦRG
4.75
5.0
5.25
V
High
VRGLH - VRGLL
0.8
V
Low
Substrate clock voltage
VΦSUB
20.0
23.0
25.0
V
Shutter



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