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KA2425B Datasheet(PDF) 3 Page - Samsung semiconductor

No. de pieza KA2425B
Descripción Electrónicos  SPEECH NETWORK WITH DIALER INTERFACE
PDF  6 Pages
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Fabricante Electrónico  SAMSUNG [Samsung semiconductor]
Página de inicio  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KA2425B Datasheet(HTML) 3 Page - Samsung semiconductor

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KA2425A
SPEECH NETWORK WITH DIALER INTERFACE
ECTRICAL CHARACTERISTICS (Continued)
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
SYSTEM AMPLIFIERS
TX
Gain
TXO Bias Voltage
TXO Bias Voltage
TXO Bias Voltage
TXO Bias Voltage
TXI input Resistance
GV (TX)
VBIAS (SPM)
VBIAS (TM)
VOL (SPM)
VOL (SPM)
RI (TXI)
TXI to TXO
Speech/Pulse Mode
Tone Mode
Speech/Pulse Mode
Speech/Pulse Mode
24
0.45
VR -25
VR -25
-
-
26
0.52
VR -5.0
VR -5.0
125
10
28
0.60
-
-
250
-
dB
xVR
mV
mV
mV
K
RX
RXO Bias voltage
RXO Source current
RXO Source current
RXO High Voltage
RXO Low Voltage
VBIAS (AM)
ISOURCE (SM)
ISOURCE (PTM)
VOH (AM)
VOL (AM)
All Mode
Speech Mode
Pulse/tone Mode
All Mode
All Mode
0.45
1.5
200
VR -100
-
0.52
2.0
400
VR -50
50
0.60
-
-
-
150
xVR
mA
µA
mV
mV
SIDETONE AMPLIFIER
Gain (TXO to STA)
Speech Mode
Speech Mode
Pulse Mode
Pulse Mode
@VLR = 0.5V
@VLR = 2.5V
@VLR = 0.2V
@VLR = 1.0V
-
-
-
-
-15
-21
-15
-21
-
-
-
-
dB
STA Bias Voltage
VBIAS (STA)
All Modes
0.65
0.8
0.9
xVR
MICROPHONE, RECEIVER CONTROLS
MIC Saturation Voltage
VSAT (MIC)
Speech Mode,1 = 500
µA
-
50
125
mV
MIC Leakage Current
ILKG (MIC)
Dialing Mode, Pin 1=3.0V
-
0
5.0
µA
RRMT (SM)
RRMT (DM)
Speech Mode
Dialing Mode
-
5.0
8.0
10
15
18
K
RMT Delay
tD (RMT)
Dialing to Speech
2.0
4.0
20
ms
EQUALIZATION AMPLIFIER
GAIN (V + to EQ)
Speech Mode
Speech Mode
Pulse Mode
Pulse Mode
GV (EQ)
@ VLR = 0.5V
@ VLR = 2.5V
@ VLR = 0.2V
@ VLR = 1.0V
-
-
-
-
-12
-2.5
-12
-2.5
-
-
-
-
dB
EQ Bias Voltage
Speech Mode
Pulse Mode
Speech, Pulse Mode
VBIAS (EQ)
@ VLR = 0.5V
@ VLR = 0.5V
@ VLR = 2.5V
-
-
-
0.66
1.3
3.3
-
-
-
Vdc
GV (STA)
RMT Resistance



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