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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
5
4
RF OUT
GND
GND
GND
RF IN
RF2337
GENERAL PURPOSE AMPLIFIER
• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low Power Applications
• Broadband Test Equipment
The RF2337 is a general purpose, low-cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cas-
cadable 50
Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 6000MHz.
The device is self-contained with 50
Ω input and output
impedances and requires only two external DC biasing
elements to operate as specified. The RF2337 is avail-
able in a very small industry-standard SOT23 5-lead sur-
face mount package, enabling compact designs which
conserve board space.
• DC to 6000MHz Operation
• Internally matched Input and Output
• 15dB Small Signal Gain
• +25dBm Output IP3
• +12dBm Output Power
• Single Positive Power Supply
RF2337
General Purpose Amplifier
RF2337 PCBA
Fully Assembled Evaluation Board
4
Rev A3 001201
1
1.60
+ 0.01
0.400
2.80
+ 0.20
2.90
+ 0.10
0.45
+ 0.10
3° MAX
0° MIN
0.127
0.15
0.05
1.44
1.04
Dimensions in mm.
0.950
Package Style: SOT 5 Lead
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