BAS45AL

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© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 5 — 6 August 2010

2 of 11

NXP Semiconductors

BAS45AL

Low-leakage diode

3.

Ordering information

4.

Marking

5.

Limiting values

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

°C prior to surge.

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BAS45AL

-

hermetically sealed glass surface-mounted package;

2 connectors

SOD80C

Table 4.

Marking codes

Type number

Marking code

BAS45AL

marking band

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

repetitive peak reverse

voltage

-125

V

reverse voltage

-

125

V

forward current

[1] -250

mA

repetitive peak forward

current

-625

mA

non-repetitive peak

forward current

square wave

[2]

μs-

4

A

-

1

A

-

0.5

A

total power dissipation

≤ 25 °C

[1] -400

mW

junction temperature

-

175

°C

storage temperature

−65

+175

°C