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RB548W Datasheet(PDF) 1 Page - Rohm |
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RB548W Datasheet(HTML) 1 Page - Rohm |
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1 / 4 page  RB548W Diodes Rev.B 1/3 Schottky barrier diode RB548W Application External dimensions (Unit : mm) Land size figure (Unit : mm) Low current rectification Features 1) Ultra small mold type. (EMD3) 2) Low IR 3) High reliability. Construction Structure Silicon epitaxial planear Taping dimensions (Unit : mm) Absolute maximum ratings Ta=25 C Symbol Unit VR V Io mA IFSM mA Tj Tstg orward current surge peak 60Hz 1cyc *1 500 125 Parameter ard current *1 -40 to +125 Limits 30 100 Reverse voltage (DC) F Junction temperature Storage temperature (*1) Rating of per diode Average rectified forw Electrical characteristics Ta=25 C Symbol Min. Typ. Max. Unit VF - - 0.45 V IF=10mA IR -- 0.5 μA VR=10V Conditions Parameter orward voltage F Reverse current |
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