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STM8S207MBT3C Datasheet(PDF) 87 Page - STMicroelectronics

No. de pieza STM8S207MBT3C
Descripción Electrónicos  Performance line, 24 MHz STM8S 8-bit MCU, up to 128 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, 2 UARTs, SPI, I²C, CAN
PDF  103 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STM8S207MBT3C Datasheet(HTML) 87 Page - STMicroelectronics

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STM8S207xx, STM8S208xx
Electrical characteristics
Doc ID 14733 Rev 9
87/103
Electromagnetic interference (EMI)
Emission tests conform to the SAE IEC 61967-2 standard for test software, board layout and
pin loading.
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (3 positive then 3 negative pulses separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test
conforms to the JESD22-A114A/A115A standard. For more details, refer to the application
note AN1181.
Table 48.
EMI data
Symbol
Parameter
Conditions
Unit
General conditions
Monitored
frequency band
Max fHSE/fCPU
(1)
8 MHz/
8 MHz
8 MHz/
16 MHz
8 MHz/
24 MHz
SEMI
Peak level
VDD = 5 V
TA = 25 °C
LQFP80 package
conforming to SAE IEC
61967-2
0.1MHz to 30 MHz
15
20
24
dBµV
30 MHz to 130 MHz
18
21
16
130 MHz to 1 GHz
-1
1
4
SAE EMI
level
SAE EMI level
2
2.5
2.5
1.
Data based on characterization results, not tested in production.
Table 49.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value(1)
1.
Data based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge voltage
(Human body model)
TA = 25°C, conforming to
JESD22-A114
A2000
V
VESD(CDM)
Electrostatic discharge voltage
(Charge device model)
TA= 25°C, conforming to
JESD22-C101
IV
1000
V



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