PBLS2002D datasheet(7/16 Pages) NXP

7 / 16 page

PBLS2002D_2

Product data sheet

Rev. 02 — 27 August 2009

7 of 16

NXP Semiconductors

PBLS2002D

20 V PNP BISS loadswitch

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02

TR2; NPN resistor-equipped transistor

ICBO

collector-base cut-off

current

VCB =50V; IE = 0 A

100

ICEO

collector-emitter

cut-off current

VCE =30V; IB =0A

µA

VCE =30V; IB =0A;

Tj = 150 °C

µA

IEBO

emitter-base cut-off

current

VEB =5V; IC = 0 A

900

µA

hFE

DC current gain

VCE =5V; IC =10mA

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA

150

VI(off)

off-state input voltage VCE =5V; IC = 100 µA

1.1

0.5

VI(on)

on-state input voltage VCE = 0.3 V; IC = 20 mA

2.5

1.9

bias resistor 1 (input)

3.3

4.7

6.1

Ω

R2/R1

bias resistor ratio

0.8

1.2

collector capacitance

VCB =10V; IE =ie =0A;

f=1MHz

2.5

Table 7.

Characteristics …continued

Tamb =25 °C unless otherwise speciﬁed

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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