74HC2G00GD datasheet(6/13 Pages) NXP

6 / 13 page

74HC_HCT2G00_4

Product data sheet

Rev. 04 — 3 July 2008

6 of 13

NXP Semiconductors

74HC2G00; 74HCT2G00

Dual 2-input NAND gate

[1]

tpd is the same as tPLH and tPHL.

[2]

tt is the same as tTLH and tTHL.

[3]

CPD is used to determine the dynamic power dissipation (PD in µW).

PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

Σ(C

L × VCC

× f

o) = sum of outputs.

12. Waveforms

74HCT2G00

tpd

propagation delay nA and nB to nY; see Figure 6

[1]

VCC = 4.5 V

transition time

VCC = 4.5 V; see Figure 6

[2]

CPD

power dissipation

capacitance

VI = GND to VCC − 1.5 V

[3]

-10-

Table 8.

Dynamic characteristics …continued

Voltages are referenced to GND (ground = 0 V); all typical values are measured at Tamb =25 °C; for test circuit see Figure 7.

Symbol Parameter

Conditions

−40 °C to +85 °C

−40 °C to +125 °C Unit

Min

Typ

Max

Min

Max

Measurement points are given in Table 9.

VOL and VOH are typical output voltage levels that occur with the output load.

Fig 6.

Propagation delay data input (nA, nB) to data output (nY) and transition time output (nY)

001aae759

tPLH

tPHL

90%

10%

nY output

nA, nB input

GND

VOH

VOL

tTLH

tTHL

Table 9.

Measurement points

Type

Input

Output

74HC2G00

0.5

× V

0.5

× V

74HCT2G00

1.3 V

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