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FMMT413 Datasheet(PDF) 2 Page - Zetex Semiconductors

No. de pieza FMMT413
Descripción Electrónicos  NPN SILICON PLANAR AVALANCHE TRANSISTOR
PDF  2 Pages
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Fabricante Electrónico  ZETEX [Zetex Semiconductors]
Página de inicio  http://www.diodes.com/
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FMMT413 Datasheet(HTML) 2 Page - Zetex Semiconductors

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SOT23 NPN SILICON PLANAR
AVALANCHE TRANSISTOR
PROVISIONAL DATASHEET ISSUE 2 – MARCH 1996
FEATURES
* Avalanche mode operation
* 50A Peak avalanche current
* Low inductance packaging
APPLICATIONS
* Laser LED drivers
* Fast edge generation
* High speed pulse generators
PARTMARKING DETAIL - 413
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
150
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
6V
Continuous Collector Current
IC
100
mA
Peak Collector Current (25ns Pulse Width)
ICM
50
A
Power Dissipation
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Emitter
Breakdown Voltage
V(BR)CES
150
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO(sus)
50
V
IC=10mA
Emitter-Base
Breakdown Voltage
V(BR)EBO
6V
IE=100µA
Collector Cut-Off Current ICBO
0.1
µ
A
VCB=120V
Emitter Cut-Off Current
IEBO
0.1
µ
A
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.15
V
IC=10mA, IB=1mA
Base-Emitter
Saturation Voltage
VBE(sat)
0.8
V
IC=10mA, IB=1mA
Current in Second
Breakdown (Pulsed)
IUSB
22
31
A
A
VC=110V, CCE=4.7nF*
VC=130V, CCE=4.7nF*
Static Forward Current
Transfer Ratio
hFE
50
IC=10mA, VCE=10V
*Measured within a circuit possessing an approximate loop inductance of 12nH. The I(USB)monitor
circuitry reflects 0.15 Ohm into the Collector-Emitter Discharge Loop
The FMMT413 device is a development product. Samples availability and release to production
scheduled for June 1996
FMMT413
FMMT413
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Emitter Inductance
Le
2.5
nH
Standard SOT23 leads
Transition Frequency
fT
150
MHz
IC=10mA, VCE=5V
f=20MHz
Collector-Base
Capacitance
Ccb
2pF
VCB=10V, IE=0
f=1MHz
.
20
10
0
40
50
30
V5 -
Supply Voltage (V)
CCE=2x4.7nF
050
100
150
200
250
CCE=4.7nF
CCE=2.2nF
CCE=1.0nF
Tamb=25°C
IB=5mA/ns
p.r.f.=10KHz
TYPICAL CHARACTERISTICS
C
B
E
SOT23
3 - 102
3 - 103



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