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2PD601ART Datasheet(PDF) 5 Page - NXP Semiconductors |
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2PD601ART Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 10 page ![]() 2PD601ART_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 15 March 2007 5 of 10 NXP Semiconductors 2PD601ART 50 V, 100 mA NPN general-purpose transistor VCE =10V (1) Tamb = 150 °C (2) Tamb =25 °C (3) Tamb = −55 °C Tamb =25 °C Fig 3. DC current gain as a function of collector current; typical values Fig 4. Collector current as a function of collector-emitter voltage; typical values IC/IB =10 (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 150 °C IC/IB =10 (1) Tamb = 150 °C (2) Tamb =25 °C (3) Tamb = −55 °C Fig 5. Base-emitter saturation voltage as a function of collector current; typical values Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values IC (mA) 10−1 102 10 1 006aaa992 200 300 100 400 500 hFE 0 (1) (2) (3) VCE (V) 010 8 46 2 006aaa993 0.04 0.06 0.02 0.08 0.1 IC (A) 0 IB (mA) = 0.56 0.50 0.44 0.38 0.32 0.26 0.20 0.14 0.08 0.02 006aaa994 0.5 0.9 1.3 VBEsat (V) 0.1 IC (mA) 10−1 102 10 1 (1) (2) (3) 006aaa995 IC (mA) 10−1 102 10 1 10−1 1 VCEsat (V) 10−2 (1) (2) (3) |
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