2PB710ASLSLASHDG datasheet(4/9 Pages) NXP

No. de pieza	2PB710ASL/DG

Descripción Electrónicos	50 V, 500 mA PNP general-purpose transistors

PDF	9 Pages

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Fabricante Electrónico	NXP [NXP Semiconductors]

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4 / 9 page

2PB710AXL_1

Product data sheet

Rev. 01 — 29 October 2008

4 of 9

NXP Semiconductors

2PB710ARL; 2PB710ASL

50 V, 500 mA PNP general-purpose transistors

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

Test information

8.1 Quality information

This product has been qualiﬁed in accordance with the Automotive Electronics Council

(AEC) standard

Q101 - Stress test qualiﬁcation for discrete semiconductors, and is

suitable for use in automotive applications.

Package outline

VBEsat

base-emitter saturation

voltage

IC = −300 mA;

IB = −30 mA

[1] --

−1.5

transition frequency

VCE = −10 V;

IC = −50 mA;

f = 100 MHz

hFE group R

120

MHz

hFE group S

140

MHz

collector capacitance

VCB = −10 V;

IE =ie =0A;

f=1MHz

--15

Table 8.

Characteristics …continued

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 1.

Package outline SOT23 (TO-236AB)

04-11-04

Dimensions in mm

0.45

0.15

1.9

1.1

0.9

3.0

2.8

2.5

2.1

1.4

1.2

0.48

0.38

0.15

0.09

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