SSM9977M datasheet(4/5 Pages) SSC

No. de pieza	SSM9977M

Descripción Electrónicos	DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrónico	SSC [Silicon Standard Corp.]

Página de inicio	http://www.siliconstandard.com

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SSM9977M/GM

8/21/2004 Rev.2.01

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

td(on) tr

td(off)tf

VDS

VGS

10%

90%

4.5V

QGS

QGD

Charge

Q G , Total Gate Charge (nC)

I D = 3 A

V DS = 30 V

V DS = 38 V

V DS = 48 V

100

1000

V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

0.001

0.01

0.1

0.0001

0.001

0.01

0.1

100

1000

t , Pulse Width (s)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthja = 135°C/W

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

0.01

0.1

100

0.1

100

1000

V DS , Drain-to-Source Voltage (V)

T A =25

o C

Single Pulse

100us

1ms

10ms

100ms

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