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MMBT4401 Datasheet(PDF) 2 Page - Rectron Semiconductor |
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MMBT4401 Datasheet(HTML) 2 Page - Rectron Semiconductor |
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2 / 6 page ![]() ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS(1) Chatacteristic Collector-Emitter Breakdown Voltage(1) (IC= 1.0 mAdc, IB= 0) Collector-Base Breakdown Voltage (IC= 0.1uAdc, IE= 0) Emitter-Base Breakdown Voltage (IE= 0.1uAdc, IC= 0) Base Cutoff Current (VCE= 35Vdc, VBE(off)= 0.4Vdc) Collector Cutoff Current (VCE= 35Vdc, VEB= 0.4Vdc) DC Current Gain (IC= 0.1mAdc, VCE= 1.0Vdc) (IC= 10mAdc, VCE= 1.0Vdc) (IC= 1.0mAdc, VCE= 1.0Vdc) V(BR)CEO 40 - Vdc V(BR)CBO 60 - Vdc V(BR)EBO 6.0 - Vdc ICEX IBEV - 0.1 - 0.1 hFE 20 - - 40 - 80 - 100 300 uAdc uAdc Symbol Min Max Unit (IC= 150mAdc, VCE= 1.0Vdc) Collector-Emitter Saturation Voltage (1) (IC= 150mAdc, IB= 15mAdc) (IC= 500mAdc, IB= 50mAdc) (IC= 500mAdc, VCE= 2.0Vdc) Vdc VCE(sat) 40 - - 0.4 - 0.75 Vdc VBE(sat) 0.75 0.95 - 1.2 Base-Emitter Saturation Voltage (1) (IC= 150mAdc, IB= 15mAdc) (IC= 500mAdc, IB= 50mAdc) SMALL-SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS fT 250 - MHz Current-Gain-Bandwidth Product (IC= 20mAdc, VCE= 10Vdc, f= 100MHz) Ccb Ceb - 6.5 pF pF td tr ts tf - - - - ns ns hie - 30 1.0 15 kohms hre 0.1 8.0 40 500 X 10-4 hfe 1.0 30 - hoe 225 30 15 20 umhos Output Capacitance (VCB= 5.0Vdc, IE= 0, f= 1.0MHz) Input Capacitance (VEB= 0.5Vdc, IC= 0, f= 1.0MHz) Voltage Feedback Ratio (VCE= 10Vdc, IC= 1.0mAdc, f= 1.0kHz) Output Admittance (VCE= 10Vdc, IC= 1.0mAdc, f= 1.0kHz) (VCC= 30Vdc, VEB= 2.0Vdc, IC= 150mAdc, IB1= 15mAdc) (VCC= 30Vdc, IC= 150mAdc, IB1= IB2= 15mAdc) Input lmpedance (VCE= 10Vdc, IC= 1.0mAdc, f= 1.0kHz) Small-Signal Current Gain (VCE= 10Vdc, IC= 1.0mAdc, f= 1.0kHz) Delay Time Rise Time Storage Time Fall Time Note : Pulse Test: Pulse Width<300ms,Duty Cycle<2.0% - - |
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