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2009 ROHM Co., Ltd. All rights reserved.

2009.10 - Rev.A

(6)

(5)

(4)

(1)

(3)

(2)

(1) Emitter

(2) Base

(3) Collector

(4) Emitter

(5) Base

(6) Collector

(Tr1)

(Tr1)

(Tr2)

(Tr2)

(Tr2)

(Tr1)

Power management (dual transistors)

VT6T2

Structure

Dimensions (Unit : mm)

PNP silicon epitaxial planar transistor

Features

Very small package with two transistors.

Applications

Switch, LED driver

Packaging specifications

inner circuit

Package

Code

Taping

Basic ordering

unit (pieces)

T2R

8000

VT6T2

Type

Absolute maximum ratings (Ta=25

°C)

Symbol

Limits

Unit

−50

V

−50

V

V

−5

mA

−200

mA

−100

150

°C

−55 to +150

°C

120

150

mW

mW

∗1

∗2

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Junction temperature

Storage temperature

Power dissipation

Parameter

Total

Element

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Cob

−50

−50

−5

−

−

−

−

−

−

−

−

−

−

300

−0.15

2

−

−

−

−0.1

−0.1

−0.40

−

−

V

V

V

µA

µA

V

MHz

pF

=

−50µA

=

−1mA

=

−50µA

=

−50V

=

−5V

=

120

−

560

−

=

=

=

Output capacitance

Transition frequency

Collector-emitter saturation voltage

Emitter cut-off current

Collector cut-off current

Emitter-base breakdown voltage

Collector-emitter breakdown voltage

Collector-base breakdown voltage

DC current gain

1.2 ± 0.1

0.8 ± 0.1

0.4

0.4

0.16 ± 0.05

0 ~ 0.05

0.13 ± 0.05

(1)

(3)

(2)

0.5 ± 0.1

Each lead has same dimensions.

(6)

(4)

(5)

UNIT : mm

VMT6

Abbreviated symbol : T2