MS8001 – MS8004

Microsemi

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

Page 2

GaAs Schottky Diodes

TM

®

Copyright

 2008

Rev.: 2009-02-17

Packaged and Bondable Chips

SPICE Model Parameters for MS8004

N

TT (Sec.)

m

6

1.05

0

0.06

0.50

1.42

0.85

5.0

Specifications @ 25°C

Part

Number

Typ.

Max.

LO

Frequency

(GHz)

Typ.

Noise Figure

IF

Impedance

(

)

Min.

0.12

6

9.375

5.6

250–500

5

0.10

6

16.000

5.6

250–500

5

0.07

6

24.000

6.5

250–500

5

0.06

6

36.000

6.5

250–500

5

1

Suffix of the model number indicates the package style. Available in M22, M38 and M39 and in chip form P10, e.g. MS8001-P10.

2

3

k = Boltzmann Constant, T = diode temperature in degrees K, q = electronic charge, I = forward current.

4

The quoted noise figure (NF) is a single side band NF measured at 6 dBm LO power in a single-ended mixer, and 10 dBm in a balanced mixer with a 30 MHz IF

amplifier with 1.5 dB NF.

5

Device Reliability

The reliability of GaAs Schottky barrier diodes has been

established through long-term operation and step-stress

testing. A high-temperature refractory metalization structure,

Ti- Pt- Au, eliminates potential problems arising from the

penetration of metalization into the semiconductor during

long-term use in the RF systems. Well established chip

fabrication and manufacturing techniques further enhance

device reliability by reducing the possibility of surface

breakdown or chip damage in mounting.

Long-term operation and step stress tests have indicated

that for a junction temperature of 200°C, MTTF will be

greater than 1E6 hours.

Precautions for Handling

Schottky Barrier Diodes

Microwave and millimeter wave Schottky barrier

diodes have very small junction areas and are

therefore extremely sensitive to accidental electrostatic

discharge (ESD) and over voltage burnout. The

first

or

most sensitive

indication

of

excessive

electrical

stress

or burnout is an increase in the

reverse leakage current: I

R

of the diode. A large overload will cause the reverse

breakdown voltage to decrease to a lower value, and also

degrade the forward voltage characteristics of the

diode. ESD is responsible for both catastrophic and latent

failures of high-frequency Schottky barrier diodes.

Static electricity, or ESD, is more prevalent in dry climates

such as experienced during the winter months, and may

be generated on one’s person or by the diode packaging

material. Therefore, extreme care must be taken when

handling these diodes.

Grounded dual wrist straps with continuous monitor,

table-top ionizers and ESD bags/enclosures should be used

when handling Schottky barrier diodes.

If auxiliary test equipment, such as an oscilloscope or a

digital voltmeter, is to be connected and used for a

monitoring diode operation, it should be connected

electrically before the diode is installed if possible. If not,

the ground side of the instrument must be connected first,

or the diode may be damaged by the AC current flowing

in the ground loop and through the diode.