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APT15D60K Datasheet(PDF) 2 Page - Microsemi Corporation

No. de pieza APT15D60K
Descripción Electrónicos  ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PDF  4 Pages
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Fabricante Electrónico  MICROSEMI [Microsemi Corporation]
Página de inicio  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT15D60K Datasheet(HTML) 2 Page - Microsemi Corporation

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THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
Package Weight
Maximum Mounting Torque
Symbol
RθJC
RθJA
W
T
Torque
MIN
TYP
MAX
1.35
80
0.07
1.9
10
1.1
UNIT
°C/W
oz
g
lb•in
N•m
MIN
TYP
MAX
-
21
-
80
-
95
-
3
-
-
150
-
520
-
7
-
-
60
-
810
-
22
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F
= 15A, di
F
/dt = -200A/µs
V
R
= 400V, T
C
= 25°C
I
F
= 15A, di
F
/dt = -200A/µs
V
R
= 400V, T
C
= 125°C
I
F
= 15A, di
F
/dt = -1000A/µs
V
R
= 400V, T
C
= 125°C
I
F
= 1A, di
F
/dt = -100A/µs, V
R
= 30V, T
J
= 25°C
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
Note:
0.583
°C/W
0.767
°C/W
0.00222 J/
°C
0.0598 J/
°C
Power
(watts)
RC MODEL
Junction
temp (
°C)
Case temperature (
°C)
APT15D60K(G)_SA(G)
DYNAMIC CHARACTERISTICS
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.



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