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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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VG3617801CT Datasheet(PDF) 21 Page - Vanguard International Semiconductor |
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VG3617801CT Datasheet(HTML) 21 Page - Vanguard International Semiconductor |
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21 / 68 page  Document:1G5-0133 Rev.1 Page 21 VIS VG3617801CT 16Mb CMOS Synchronous Dynamic RAM 9.3 WRITE to READ Command Interval The WRITE command to READ command interval is a minimum of 1 cycle. Only the WRITE data pre- ceding the READ command will be written. The data bus must be in high-impedance at least one cycle prior to the first DOUT. WRITE to READ Command Interval 9.4 READ to WRITE Command Interval During READ cycle, READ can be interrupted by WRITE. The data bus must be in high-impedance using DQM before the WRITE command. DQM must be high at least 3 clocks prior to the WRITE command. This restriction is necessary to avoid a data bus conflict. Burst lengh=4 CLK Command CAS latency=2 DQ Command CAS latency=3 DQ QB0 QB3 QB2 QB1 WRITE A Write A T0 T1 T2 T3 T4 T5 T6 T7 T8 QB0 QB3 QB2 QB1 1 cycle Read B DA0 Read B DA0 Hi-Z Hi-Z |
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