PSII50SLASH06 datasheet(1/4 Pages) POWERSEM

No. de pieza	PSII50/06

Descripción Electrónicos	IGBT Module

PDF	4 Pages

Scroll/Zoom	100%

Fabricante Electrónico	POWERSEM [Powersem GmbH]

Página de inicio	http://www.powersem.com

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1 / 4 page

tentative

data

sheet

product

still

under

development

IGBT Module

I

C80

=

48 A

V

CES

=

600 V

V

CE(sat)typ. =

2.3 V

Features

•

Package with DCB ceramic

base plate

•

Isolation voltage 3000 V

∼

•

Planar glass passivated chips

•

Low forward voltage drop

•

Leads suitable for PC board

soldering

•

UL Release applied

Applications

•

AC and DC motor control

•

AC servo and robot drives

•

Power supplies

•

Welding inverters

Advantages

•

Easy to mount with four screws

•

Space and weight savings

•

Improved temperature and

power cycling capability

•

High power density

•

Small and light weight

POWERSEM GmbH, Walpersdorfer Str. 53

D - 91126 Schwabach

Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

 2005 POWERSEM reserves the right to change limits, test conditions and dimensions

Preliminary Data Sheet

*NTC optional

Caution: These Devices are sensitive

to electrostatic discharge. Users should

observe proper ESD handling precautions.

PSII 50/06*

IGBTs

Symbol

Conditions

Maximum Ratings

V

CES

T

VJ = 25°C to 150°C

600

V

GES

± 20

V

I

C25

T

C = 25°C

69

A

I

C80

T

C = 80°C

48

A

I

CM

V

GE = ±15 V; RG = 22 Ω; TVJ = 125°C

100

A

V

CEK

RBSOA, Clamped inductive load; L = 100 µH

V

CES

t

SC

V

CE = VCES; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C

10

µs

(SCSOA)

non-repetitive

P

tot

T

C = 25°C

208

W

Symbol

Conditions

Characteristic Values

(T

VJ = 25°C, unless otherwise specified)

min.

typ.

max.

V

CE(sat)

I

C = 75 A; VGE = 15 V; TVJ =

25°C

2.3

2.8

V

T

VJ = 125°C

2.8

V

GE(th)

I

C = 1 mA; VGE = VCE

4.5

6.5

V

I

CES

V

CE = VCES;VGE = 0 V;

T

VJ =

25°C

0.8 mA

T

VJ = 125°C

4.4 mA

I

GES

V

CE = 0 V; VGE =

± 20 V

100

nA

t

d(on)

50

ns

t

r

55

ns

t

d(off)

300

ns

t

f

30

ns

E

on

1.8

mJ

E

off

1.4

mJ

C

ies

V

CE = 25 V; VGE = 0 V; f = 1 MHz

2.8

nF

R

thJC

(per IGBT)

0.6 K/W

R

thJH

with heatsink compound (0.42 K/m.K; 50 µm)

1.2

K/W

Inductive load, T

VJ = 125°C

V

CE = 300 V; IC = 40 A

V

GE = 15/0 V; RG = 22 Ω

ECO-TOPTM 1

V3

V6

N1

G1

Q1

V10

V9

N15

K1

V13

V12

G15

V1

U1

A1

S15

D1

A9

A7

A15

R15

typical picture, for pin

configuration see outline

drawing

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