PSII24SLASH06 datasheet(1/5 Pages) POWERSEM

No. de pieza	PSII24/06

Descripción Electrónicos	IGBT Module

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrónico	POWERSEM [Powersem GmbH]

Página de inicio	http://www.powersem.com

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1 / 5 page

IGBT Module

PSII 24/06*

I

C25

= 19 A

Sixpack

V

CES

= 600 V

V

CE(sat)typ. = 1.9 V

Features

•

NPT IGBT’s

- positive temperature coefficient of

saturation voltage

- fast switching

•

FRED diodes

- fast reverse recovery

- low forward voltage

•

Industry Standard Package

- solderable pins for PCB mounting

- isolated DCB ceramic base plat

e

•

UL registered, E 148688

Applications

•

AC drives

•

power supplies with power factor

correction

Advantages

•

Easy to mount with two screws

•

Space and weight savings

•

Improved temperature and power

cycling capability

•

High power density

•

Small and light weight

POWERSEM GmbH, Walpersdorfer Str. 53

D - 91126 Schwabach

Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

ECO-PAC

TM 2

 2002 POWERSEM reserves the right to change limits, test conditions and dimensions

Preliminary Data Sheet

*NTC optional

Caution: These devices are

sensitive to electrostatic discharge.

Users should observe proper ESD

handling precautions.

IGBTs

Symbol

Conditions

Maximum Ratings

V

CES

T

VJ = 25°C to 150°C

600

V

GES

± 20

V

I

C25

T

C = 25°C

19

A

I

C80

T

C = 80°C

14

A

I

CM

V

GE = ±15 V; RG = 82 Ω; TVJ = 125°C

20

A

V

CEK

RBSOA, Clamped inductive load; L = 100 µH

V

CES

t

SC

V

CE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C

10

µs

(SCSOA)

non-repetitive

P

tot

T

C = 25°C

73

W

Symbol

Conditions

Characteristic Values

(T

VJ = 25°C, unless otherwise specified)

min.

typ.

max.

V

CE(sat)

I

C = 10 A; VGE = 15 V; TVJ =

25°C

1.9

2.4

V

T

VJ = 125°C

2.2

V

GE(th)

I

C = 0.35 mA; VGE = VCE

4.5

6.5

V

I

CES

V

CE = VCES;VGE = 0 V; TVJ =

25°C

0.6 mA

T

VJ = 125°C

2.7

mA

I

GES

V

CE = 0 V; VGE =

± 20 V

100

nA

t

d(on)

35

ns

t

r

35

ns

t

d(off)

230

ns

t

f

30

ns

E

on

0.4

mJ

E

off

0.3

mJ

C

ies

V

CE = 25 V; VGE = 0 V; f = 1 MHz

600

pF

Q

Gon

V

CE = 300 V; VGE = 15 V; IC = 10 A

39

nC

R

thJC

(per IGBT)

1.7 K/W

R

thJH

with heatsink compound (0.42 K/m.K; 50 µm)

3.4

K/W

Inductive load, T

VJ = 125°C

V

CE = 300 V; IC = 10 A

V

GE = ±15 V; RG = 82 Ω

PSII 24/06*

S9

X18

N9

L9

W14

R5

N5

H5

D5

A5

K12

K13

G1

F3

K10

A1

C1

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