AlGaAs/GaAs HIGH POWER T-1 PACKAGE

INFRARED EMITTING DIODE

MIE-324A2

Description

Package Dimensions

The MIE-324A2 is a high power infrared eimtting

diode in GaAs technology with AlGaAs window

coating molded in water clear plastic package.

Features

l

High radiant power and high radiant intensity

l

Suitable ror DC and high pulse current operation

l

Standard T-1 (

φ 3mm) package, radiation angle: 40°

l

Peak wavelength

λp = 940 nm

l

Good spectral matching to si-photodetector

Absolute Maximum Ratings

Parameter

Maximum Rating

Unit

Power Dissipation

120

mW

Peak Forward Current(300pps,10

µs pulse)

1

A

Continuos Forward Current

100

mA

Reverse Voltage

5

V

Operating Temperature Range

-55

Storage Temperature Range

-55

Lead Soldering Temperature

260

02/04/2002

Unity Opto Technology Co., Ltd.

Unit : mm (inches )

C

A

2.54NOM.

(.100)

1.00MIN.

(.039)

SEE NOTE 2

φ 3.10±0.20

(.122±.008)

0.50 TYP.

(.020)

23.40MIN.

(.920)

φ 3.55±0.25

(.140±.010)

5.28±0.30

(.208±.012)

SEE NOTE 3

4.28±0.20

(.169±.008)

3.85

(.152)

Notes :

1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.

2. Protruded resin under flange is 1.5 mm (.059") max.

3. Lead spacing is measured where the leads emerge from the package.