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CHA5215AFKF/23 Datasheet(PDF) 2 Page - United Monolithic Semiconductors |
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CHA5215AFKF/23 Datasheet(HTML) 2 Page - United Monolithic Semiconductors |
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2 / 12 page ![]() CHA5215a 5.8GHz Medium Power Amplifier Ref. : DSCHA52150160 -08-Jun-00 2/12 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Electrical Characteristics Tamb = +25°C Symbol Parameter Test Conditions Min. Typ. Max Unit Fop Operating frequency range 5 5.8 7 GHz Glin Linear gain (Gc=-5V) 25 dB Gdr Gain control dynamic range 10 15 dB Gc Gain control voltage -5 0 V Pout Saturated output power 27 dBm Sdet Output power monitor sensitivity -5 mV/mW Vref Reference monitor voltage 550 mV RLin Input return loss (full band) (2) 7 12 dB RLout Output return loss (2) 6 dB Vd Positive supply voltage (1) 9 V Id Positive supply current 330 400 mA Vg Negative supply voltage -1.4 V Ig Negative supply current 15 mA (1) Depending on the application a trade-off can be obtained between linearity and power consumption by adjusting the positive supply voltage (from 6 to 9V). (2) The return loss can be improved by using a simple matching network (available on request). Absolute Maximum Ratings (1) Tamb = +25°C Symbol Parameter Values Unit Vd Positive supply voltage 10 V Vg Negative supply voltage -6 to 0 (3) V Gc Gain control voltage -6 to 0.6 Pin Maximum peak input power overdrive (2) 20 dBm Top Operating temperature range -50 to +70 °C Tstg Storage temperature range -55 to +155 °C (1) Operation of this device above anyone of these parameters may cause permanent damage (2) Duration < 1s (3) Choose Vg in order to have Id ≤ 400mA when Vd is applied |
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