10-18GHz LNA VGA

CHA2291

Ref. : DSCHA22912149 - 29-May-02

2/6

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics for Broadband Operation

Tamb = +25°C, V5=Vd2,3,4= 5V

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

10

18

GHz

G

Small signal gain (1)

23

dB

∆G

Small signal gain flatness (1)

±1

dB

Is

Reverse isolation (1)

60

dB

NF

Noise figure with Vc=1.2V (1)

2.2

dB

Gctrl

Gain control range versus Vc

20

dB

P1dB

Output power at 1dB compression with Vc=1.2V

10

dBm

VSWRin

Input VSWR (1)

3.0:1

VSWRout

Output VSWR (1)

2.5:1

Vd

DC voltage

V5= Vd2,3,4

Vc

-1.5

5

[-0.7, +1.2]

+1.3

V

V

Id1

Bias current (2) with Vc=1.2V

25

mA

Id

Bias current total (3) with Vc=1.2V

180

mA

(1) These values are representative of on-wafer measurements that are made without bonding

wires at RF ports.

(2) For optimum noise figure, the bias current Id1 should be adjusted to 25mA with Vg1 voltage.

(3) With Id1=25mA, adjust Vg2,3,4 voltage for a total drain current around 180mA.

Absolute Maximum Ratings

Tamb. = 25°C (1)

Symbol

Parameter

Values

Unit

Vd

Maximum Drain bias voltage

+5.25

V

Id

Maximum drain bias current

250

mA

Vg

Gate bias voltage

-2.5 to +0.4

V

Vc

Maximum Control bias voltage

+1.5

V

Vdg

Maximum drain to gate voltage (Vd - Vg)

+5.0

V

Pin

Maximum input power overdrive (2)

+15

dBm

Tch

Maximum channel temperature

+175

°C

Ta

Operating temperature range

-40 to +85

°C

Tstg

Storage temperature range

-55 to +125

°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

(2) Duration < 1s.