BD679 datasheet(2/4 Pages) COMSET

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COMSET SEMICONDUCTORS

NPN BD675-BD677-BD679-BD681

PNP BD676-BD678-BD680-BD682

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Unit

IE=0 ,

VCB= VCBOMAX=60 V

BD675

0,2

IE=0 ,

VCB= VCBOMAX=80 V

BD677

0,2

IE=0 ,

VCB= VCBOMAX=100 V

BD679

0,2

IE=0 ,

VCB= VCBOMAX=120 V

BD681

0,2

IE=0 ,

VCB=½VCBOMAX= 30V,Tj=

150°C

BD675

IE=0 ,

VCB=½VCBOMAX= 40V,Tj=

150°C

BD677

IE=0 ,

VCB=½VCBOMAX= 50V,Tj=

150°C

BD679

ICBO

Collector cut-off current

IE=0 ,

VCB=½VCBOMAX= 60V,Tj=

150°C

BD681

IB=0 ,

VCE= ½VCEOMAX=30 V

BD675

0,2

IB=0 ,

VCE= ½VCEOMAX=40 V

BD677

0,2

IB=0 ,

VCE= ½VCEOMAX=50 V

BD679

0,2

ICEO

Collector cut-off current

IB=0 ,

VCE= ½VCEOMAX=60 V

BD681

0,2

IEBO

Emitter cut-offcurrent

IC=0, -VEB=5 V

VCE(SAT)

Collector-Emitter saturation

Voltage

IC=1.5 A,-IB=6 Ma (BD675 ; IC=2 A )

2,5

VCE=3 V, IC=500 mA

2200

VCE=3 V, IC=1,5 A

750

hFE

DC Current Gain

VCE=3 V, IC=4 A

1500

VBE

Base-Emitter Voltage(1&2)

VCE=3 V, IC=1,5 A (BD675 ; IC=2 A )

2,5

hfe

Small signal current gain

VCE=3 V, IC=1,5 A, f= 1 MHz (BD675 ;

IC=2 A )

fhfe

Ut-off frequency

VCE=3 V, IC=1,5 A (BD675 ; IC=2 A )

kHz

Diode forward voltage

IF=1,5 A (BD675 ; IF=2 A )

1,5

I(SB)

Second-breakdown

collector current

-VCE=50 V, tP= 20ms,non rep., without

heatsink

0,8

ton

Turn-on time

0,3

1.5

toff

Turn-off time

-Icon= 1,5A, -Ibon= Iboff= 6mA,

1,5

µs

Measured under pulse conditions :tP <300µs, δ <2%.

VBE decreases by about 3,6 mV/K with increasing temperature.

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