MAX1908 datasheet(6/30 Pages) MAXIM

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Low-Cost Multichemistry Battery Chargers

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ELECTRICAL CHARACTERISTICS (continued)

(VDCIN = VCSSP = VCSSN = 18V, VBATT = VCSIP = VCSIN = 12V, VREFIN = 3V, VVCTL = VICTL = 0.75 x VREFIN, CELLS = open, CLS =

REF, VBST - VLX = 4.5V, ACIN = GND = PGND = 0, CLDO = 1µF, LDO = DLOV, CREF = 1µF; CCI, CCS, and CCV are compensated

per Figure 1a; TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

ERROR AMPLIFIERS

GMV Amplifier Transconductance

GMV

VVCTL = VLDO, VBATT = 16.8V,

CELLS = VREFIN

0.0625

0.125

0.2500

µA/mV

GMI Amplifier Transconductance

GMI

VICTL = VREFIN, VCSIP - VCSIN = 75mV

0.5

2.0

µA/mV

GMS Amplifier Transconductance

GMS

VCLS = VREF, VCSSP - VCSSN = 75mV

0.5

2.0

µA/mV

CCI, CCS, CCV Clamp Voltage

0.25V < VCCV,CCS,CCI < 2V

150

300

600

LOGIC LEVELS

CELLS Input Low Voltage

0.4

CELLS Input Open Voltage

CELLS = open

(VREFIN

/2) -

0.2V

VREFIN/

(VREFIN

/2) +

0.2V

CELLS Input High Voltage

VREFIN

- 0.4V

CELLS Input Bias Current

CELLS = 0V or VREFIN

-2

µA

ACOK AND SHDN

ACOK Input Voltage Range

ACOK Sink Current

VACOK = 0.4V, VACIN = 3V

ACOK Leakage Current

VACOK = 28V, VACIN = 0V

µA

SHDN Input Voltage Range

LDO

VSHDN = 0V OR VLDO

-1

SHDN Input Bias Current

VSHDN = 0V OR VSHDN = 5V

-1

µA

SHDN Threshold

VSHDN falling

23.5

% of

VREFIN

SHDN Threshold Hysteresis

% of

VREFIN

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