HAT2202C datasheet(2/7 Pages) RENESAS

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HAT2202C

REJ03G1236-0600 Rev.6.00 Oct 01, 2009

Page 2 of 6

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to Source breakdown voltage

V(BR)DSS

—

ID = 10 mA, VGS = 0

Gate to Source breakdown voltage

V(BR)GSS

±12

—

IG = ±100 μA, VDS = 0

Gate to Source leakage current

IGSS

—

±10

μA

VGS = ± 10V, VDS = 0

Drain to Source leakage current

IDSS

—

μA

VDS = 20 V, VGS = 0

Gate to Source cutoff voltage

VGS(th)

0.4

—

1.4

ID = 10 V, ID = 1 mA

—

ID = 1.5 A, VGS =4.5 V

Note3

Drain to Source on state resistance

RDS(on)

—

ID = 1.5 A, VGS = 2.5 V

Note3

Forward transfer admittance

|yfs|

6.5

9.5

—

ID = 1.5 A, VDS = 10 V

Note3

Input capacitance

Ciss

—

520

—

Output capacitance

Coss

—

115

—

Reverse transfer capacitance

Crss

—

VDS = 10 V, VGS = 0,

f = 1 MHz

Total gate charge

—

Gate to Source charge

Qgs

—

Gate to Drain charge

Qgd

—

1.4

—

VDD = 10 V, VGS = 4.5 V,

ID = 3 A

Turn - on delay time

td(on)

—

Rise time

—

Turn - off delay time

td(off)

—

Fall time

—

ID = 1.5 A,

VGS = 10 V, VDD =10 V,

RL= 6.7 Ω, Rg = 4.7 Ω

Body - Drain diode forward voltage

VDF

—

0.8

1.1

IF = 3 A, VGS = 0

Note3

Notes: 3. Pulse test

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