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H7N1002LS Datasheet(PDF) 4 Page - Renesas Technology Corp

No. de pieza H7N1002LS
Descripción Electrónicos  Silicon N Channel MOS FET High Speed Power Switching
PDF  9 Pages
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Fabricante Electrónico  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H7N1002LS Datasheet(HTML) 4 Page - Renesas Technology Corp

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H7N1002LD, H7N1002LS, H7N1002LM
Preliminary
REJ03G1131-0800 Rev.8.00 Nov 13, 2009
Page 4 of 8
Case Temperature
Tc (°C)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current
40
–400
40
80120
160
0
8
16
24
32
10 V
VGS = 4.5 V
50 A
ID = 10 A, 20 A
50 A
10 A, 20 A
Pulse Test
0.01
0.11
10
10
200
100
1
0.1
0.02
75°C
25°C
100
VDS = 10 V
Pulse Test
Reverse Drain Current
IDR (A)
Body to Drain Diode Reverse
Recovery Time
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Dynamic Input Characteristics
Drain Current
ID (A)
Switching Characteristics
1
0.10.3
3
10
30
100
100
50
20
10
di / dt = 100 A /
μs
VGS = 0, Ta = 25°C
010
20
30
40
50
500
1000
5000
2000
100
50
200
20
10000
20000
200
0
20
80160240320
400
0
4
8
12
16
0
40
80
120
160
ID = 75 A
VGS
VDS
1000
100
300
30
10
1
3
0.10.3
3
10
100
30
1
tr
td(on)
td(off)
tf
VDD = 80 V
50 V
25 V
VDD = 25 V
50 V
80 V
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
Tc = –25°C
VGS = 10 V, VDD = 30 V
PW = 5
μs, duty ≤ 1 %
Rg = 4.7
Ω



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