BUJD103AD datasheet(1/14 Pages) NXP

No. de pieza	BUJD103AD

Descripción Electrónicos	NPN power transistor with integrated diode

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Fabricante Electrónico	NXP [NXP Semiconductors]

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BUJD103AD

NPN power transistor with integrated diode

Rev. 02 — 6 October 2009

Product data sheet

1.

Product profile

1.1 General description

High voltage, high speed, planar passivated NPN power switching transistor with

integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic

package.

1.2 Features and benefits

Fast switching

High voltage capability

Integrated anti-parallel E-C diode

Very low switching and conduction

losses

1.3 Applications

DC-to-DC converters

Electronic lighting ballasts

Inverters

Motor control systems

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

Min

Typ

Max

Unit

IC

collector current

-

4

A

Ptot

total power

dissipation

see Figure 4Tmb ≤ 25 °C

--80

W

VCESM

collector-emitter

peak voltage

VBE = 0 V

-

700

V

Static characteristics

hFE

DC current gain

IC = 500 mA; VCE =5V;

see Figure 12Tj =25°C

13

22

32

VCE =5V; IC =3A;

Tmb = 25 °C; see Figure 12

-

12.5

-

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BUJD103AD Datasheet(PDF) 1 Page - NXP Semiconductors

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