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MCP6071-E/ST Datasheet(PDF) 4 Page - Microchip Technology

No. de pieza MCP6071-E/ST
Descripción Electrónicos  110 關A, High Precision Op Amps
PDF  34 Pages
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Fabricante Electrónico  MICROCHIP [Microchip Technology]
Página de inicio  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MCP6071-E/ST Datasheet(HTML) 4 Page - Microchip Technology

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MCP6071/2/4
DS22142A-page 4
© 2009 Microchip Technology Inc.
TABLE 1-2:
AC ELECTRICAL SPECIFICATIONS
TABLE 1-3:
TEMPERATURE SPECIFICATIONS
Open-Loop Gain
DC Open-Loop Gain
(Large Signal)
AOL
95
115
dB
0.2V < VOUT <(VDD-0.2V)
VCM = VSS
Output
Maximum Output Voltage Swing
VOL, VOH
VSS+15
VDD–15
mV
G = +2 V/V,
0.5V input overdrive
Output Short-Circuit Current
ISC
—±7
mA
VDD = 1.8V
—±28
mA
VDD = 6.0V
Power Supply
Supply Voltage
VDD
1.8
6.0
V
Quiescent Current per Amplifier
IQ
50
110
170
µA
IO = 0, VDD = 6.0V
VCM = 0.9VDD
Electrical Characteristics: Unless otherwise indicated, T
A = +25°C, VDD = +1.8 to +6.0V, VSS = GND, VCM = VDD/2,
VOUT ≈ VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 60 pF. (Refer to Figure 1-1).
Parameters
Sym
Min
Typ
Max
Units
Conditions
AC Response
Gain Bandwidth Product
GBWP
1.2
MHz
Phase Margin
PM
57
°
G = +1 V/V
Slew Rate
SR
0.5
V/µs
Noise
Input Noise Voltage
Eni
4.3
µVp-p
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density
eni
—19
nV/
√Hz f = 10 kHz
Input Noise Current Density
ini
—0.6
fA/
√Hz f = 1 kHz
Electrical Characteristics: Unless otherwise indicated, V
DD = +1.8V to +6.0V and VSS = GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Operating Temperature Range
TA
-40
+125
°C
Note 1
Storage Temperature Range
TA
-65
+150
°C
Thermal Package Resistances
Thermal Resistance, 8L-2x3 TDFN
θ
JA
—41
°C/W
Thermal Resistance, 8L-SOIC
θ
JA
—149.5
°C/W
Thermal Resistance, 14L-SOIC
θ
JA
95.3
°C/W
Thermal Resistance, 14L-TSSOP
θ
JA
100
°C/W
Note 1: The internal junction temperature (T
J) must not exceed the absolute maximum specification of +150°C.
TABLE 1-1:
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, V
DD = +1.8V to +6.0V, VSS= GND, TA= +25°C, VCM = VDD/2,
VOUT ≈ VDD/2, VL = VDD/2 and RL = 10 kΩ to VL. (Refer to Figure 1-1).
Parameters
Sym
Min
Typ
Max
Units
Conditions
Note 1: Figure 2-13 shows how V
CMR changed across temperature.



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