MCP413X datasheet(3/88 Pages) MICROCHIP

3 / 88 page

DS22060B-page 3

MCP413X/415X/423X/425X

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

Voltage on VDD with respect to VSS ............... -0.6V to +7.0V

Voltage on CS, SCK, SDI, SDI/SDO, and

SHDN with respect to VSS ...................................... -0.6V to 12.5V

Voltage on all other pins (PxA, PxW, PxB, and

SDO) with respect to VSS ............................ -0.3V to VDD + 0.3V

Input clamp current, IIK

(VI < 0, VI > VDD, VI > VPP ON HV pins) ......................±20 mA

Output clamp current, IOK

(VO < 0 or VO > VDD) ..................................................±20 mA

Maximum output current sunk by any Output pin

......................................................................................25 mA

Maximum output current sourced by any Output pin

......................................................................................25 mA

Maximum current out of VSS pin .................................100 mA

Maximum current into VDD pin ....................................100 mA

Maximum current into PXA, PXW & PXB pins ............±2.5 mA

Storage temperature ....................................-65°C to +150°C

Ambient temperature with power applied

.....................................................................-40°C to +125°C

Total power dissipation (Note 1) ................................400 mW

Soldering temperature of leads (10 seconds) ............. +300°C

ESD protection on all pins

.................................. ≥ 4 kV (HBM),

..........................................................................

≥ 300V (MM)

Maximum Junction Temperature (TJ) ......................... +150°C

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational listings of this specification is not implied.

Exposure to maximum rating conditions for extended periods

may affect device reliability.

Note 1: Power dissipation is calculated as follows:

Pdis = VDD x {IDD -

∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL)

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