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STM8L151C4T3 Datasheet(PDF) 91 Page - STMicroelectronics |
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STM8L151C4T3 Datasheet(HTML) 91 Page - STMicroelectronics |
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91 / 101 page ![]() STM8L151xx, STM8L152xx Electrical parameters Doc ID 15962 Rev 2 91/101 Static latch-up ● LU: 3 complementary static tests are required on 10 parts to assess the latch-up performance. A supply overvoltage (applied to each power supply pin) and a current injection (applied to each input, output and configurable I/O pin) are performed on each sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details, refer to the application note AN1181. 8.4 Thermal characteristics The maximum chip junction temperature (TJmax) must never exceed the values given in Table 15: General operating conditions on page 58. The maximum chip-junction temperature, TJmax, in degree Celsius, may be calculated using the following equation: TJmax = TAmax + (PDmax x ΘJA) Where: ● TAmax is the maximum ambient temperature in ° C ● ΘJA is the package junction-to-ambient thermal resistance in ° C/W ● PDmax is the sum of PINTmax and PI/Omax (PDmax = PINTmax + PI/Omax) ● PINTmax is the product of IDD and VDD, expressed in Watts. This is the maximum chip internal power. ● PI/Omax represents the maximum power dissipation on output pins Where: PI/Omax = Σ (VOL*IOL) + Σ((VDD-VOH)*IOH), taking into account the actual VOL/IOL and VOH/IOH of the I/Os at low and high level in the application. Table 50. ESD absolute maximum ratings Symbol Ratings Conditions Maximum value (1) 1. Data based on characterization results, not tested in production. Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA = +25 °C 2000 V VESD(CDM) Electrostatic discharge voltage (charge device model) 1000 Table 51. Electrical sensitivities Symbol Parameter Class LU Static latch-up class II |
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