AD8264ACPZ-R7 datasheet(6/40 Pages) AD

6 / 40 page

AD8264

Rev. 0 | Page 6 of 40

ABSOLUTE MAXIMUM RATINGS

Table 2.

Parameter

Rating

Voltage

Supply Voltage (VPOS, VNEG)

±6 V

Input Voltage (INPx)

VPOS, VNEG

Gain Voltage (GNHx, GNLO)

VPOS, VNEG

Power Dissipation

2.5 W

Temperature

Operating Temperature Range

−40°C to +105°C

Storage Temperature Range

−65°C to +150°C

Lead Temperature (Soldering, 60 sec)

300°C

Package Glass Transition Temperature (TG)

150°C

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

THERMAL RESISTANCE

θJA is specified for the worst-case conditions, that is, a device

soldered in a circuit board for surface-mount packages. The θJA

values in Table 3 assume a 4-layer JEDEC standard board with

zero airflow.

Table 3. Thermal Resistance

Package Type

θJA

θJC

Unit

40-Lead LFCSP1

31.0

2.3

°C/W

1 4-Layer JEDEC board (2S2P).

MAXIMUM POWER DISSIPATION

The maximum safe power dissipation for the AD8264 is limited

by the associated rise in junction temperature (TJ) on the die. At

approximately 150°C, which is the glass transition temperature,

the properties of the plastic change. Even temporarily exceeding

this temperature limit may change the stresses that the package

exerts on the die, permanently shifting the parametric performance

of the amplifiers. Exceeding a temperature of 150°C for an

extended period can cause changes in silicon devices, potentially

resulting in a loss of functionality.

ESD CAUTION

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