MJ8502 datasheet(1/2 Pages) ISC

No. de pieza	MJ8502

Descripción Electrónicos	Silicon NPN Power Transistor

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

MJ8502

DESCRIPTION

· Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 700V(Min)

·High Switching Speed

APPLICATIONS

·Designed for high-voltage ,high-speed, power switching in

inductive circuits where fall time is critical. They are partic-

ularly suited for line operated switch-mode applications.

Typical applications:

·Switching regulators

·Inverters

·Solenoid and relay drivers

·Motor controls

·Deflection circuits

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCEV

Collector-Emitter Voltage

1200

V

VCEO(SUS)

Collector-Emitter Voltage

700

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current-Continuous

5

A

ICM

Collector Current-Peak

10

A

IB

B

Base Current-Continuous

4

A

IBM

Base Current-Peak

8

A

PC

Collector Power Dissipation@TC=25℃

150

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.16

℃/W

isc Website：www.iscsemi.cn

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