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APT60GA60JD60 Datasheet(PDF) 9 Page - Microsemi Corporation

No. de pieza APT60GA60JD60
Descripción Electrónicos  High Speed PT IGBT
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  MICROSEMI [Microsemi Corporation]
Página de inicio  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT60GA60JD60 Datasheet(HTML) 9 Page - Microsemi Corporation

  APT60GA60JD60 Datasheet HTML 1Page - Microsemi Corporation APT60GA60JD60 Datasheet HTML 2Page - Microsemi Corporation APT60GA60JD60 Datasheet HTML 3Page - Microsemi Corporation APT60GA60JD60 Datasheet HTML 4Page - Microsemi Corporation APT60GA60JD60 Datasheet HTML 5Page - Microsemi Corporation APT60GA60JD60 Datasheet HTML 6Page - Microsemi Corporation APT60GA60JD60 Datasheet HTML 7Page - Microsemi Corporation APT60GA60JD60 Datasheet HTML 8Page - Microsemi Corporation APT60GA60JD60 Datasheet HTML 9Page - Microsemi Corporation  
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Dynamic Characteristics
TJ = 25°C unless otherwise specified
APT60GA60JD60
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
SOT-227 (ISOTOP
®) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Emitter/Anode
Collector/Cathode
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Emitter/Anode
Emitter/Anode terminals are
shorted internally. Current
handling capability is equal
for either Emitter/Anode terminal.
)
4
3
1
2
5
5
Zero
1
2
3
4
di
F/dt - Rate of Diode Current Change Through Zero Crossing.
I
F - Forward Conduction Current
I
RRM - Maximum Reverse Recovery Current.
trr - Reverse Recovery Time, measured from zero crossing where diode
Qrr - Area Under the Curve Defined by IRRM and trr.
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
Figure 33. Diode Test Circui
t
Figure 34, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
PEARSON 2878
CURRENT
TRANSFORMER
di
F/dt Adjust
30
μH
D.U.T.
+18V
0V
Vr
trr/Qrr
Waveform
APT60GT60BR



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