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APTGF50TL60T3G Datasheet(PDF) 2 Page - Microsemi Corporation

No. de pieza APTGF50TL60T3G
Descripción Electrónicos  Three level inverter NPT IGBT Power Module
PDF  8 Pages
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Fabricante Electrónico  MICROSEMI [Microsemi Corporation]
Página de inicio  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGF50TL60T3G Datasheet(HTML) 2 Page - Microsemi Corporation

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APTGF50TL60T3G
www.microsemi.com
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All ratings @ Tj = 25°C unless otherwise specified
Q1 to Q4 Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
250
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
500
µA
Tj = 25°C
1.7
2.0
2.45
VCE(sat)
Collector Emitter Saturation Voltage
VGE =15V
IC = 50A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 1mA
4
6
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Q1 to Q4 Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
2200
Coes
Output Capacitance
323
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
200
pF
Qg
Total gate Charge
166
Qge
Gate – Emitter Charge
20
Qgc
Gate – Collector Charge
VGE = 15V
VBus = 300V
IC = 50A
100
nC
Td(on)
Turn-on Delay Time
40
Tr
Rise Time
9
Td(off)
Turn-off Delay Time
120
Tf
Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7Ω
12
ns
Td(on)
Turn-on Delay Time
42
Tr
Rise Time
10
Td(off)
Turn-off Delay Time
130
Tf
Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7Ω
21
ns
Eon
Turn-on Switching Energy
Tj = 125°C
0.5
Eoff
Turn-off Switching Energy
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7Ω
Tj = 125°C
1
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 360V
tp ≤ 10µs ; Tj = 125°C
225
A
RthJC
Junction to Case Thermal Resistance
0.5
°C/W



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