CHEMF21PT datasheet(2/5 Pages) CHENMKO

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CHDTC114E LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Characteristics of built-in transistor.

CHDTC114E CHARACTERISTICS

Note

Pulse test: tp

≤300uS; δ≤0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCC

Supply voltage

−

VIN

Input voltage

-10

+40

−

IC(Max.)

DC Output current

−

100

−

150

TSTG

Storage temperature

−55

+150

Junction temperature

−

150

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VIoff)

Input off voltage

IO=100uA; VCC=5.0V

−

0.5

VI(on)

Input on voltage

IO=10mA; VO=0.3V

3.0

−

VO(on)

Output voltage

IO=10mA; II=0.5mA

−

0.3

0.1

Input current

VI=5V

−

0.88

IC(off)

Output current

Input resistor

VI=0V; VCC=50V

DC current gain

IO=5mA; VO=5.0V

−

0.5

−

Ω

R2/R1

Resistor ratio

0.8

1.2

−

1.0

f T

Transition frequency

IE=-5mA, VCE=10.0V

f=100MHz

−

250

MHz

Tamb =25 °C unless otherwise speciÞed.

NOTE.1

Power dissipation

NOTE.2

2. Each terminal mounter on a recommended land.

−

2SA2018 CHARACTERISTICS

Tamb =25 °C unless otherwise speciÞed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

BVEBO

Collector-emitter breakdown voltage

−

-12

Collector-base breakdown voltage

-15

−

Emitter-base breakdown voltage

Collector cut-off current

−

-100

Emitter cut-off current

Collector-emitter saturation voltage

hFE

DC current gain

−

-100

270

-250

Collector output capacitance

−

-100

6.5

f T

Transition frequency

−

260

MHz

-6

BVCBO

BVCEO

ICBO

IEBO

Cob

VCE(sat)

−

680

−

VCE=-2V,IE=10mA,f=100MHZ

VCB=-10V,IE=0mA,f=1MHZ

IC=-200mA,IB=-10mA

VCE=-2V,IC=-10mA

VCB=-15V

VEB=-6V

IE=-10uA

IC=-10uA

IC=-1mA

Note

1.Pulse test: tp

≤300uS; δ≤0.02.

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