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SSG4575 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

No. de pieza SSG4575
Descripción Electrónicos  Enhancement Mode Power Mos.FET
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de inicio  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSG4575 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Electrical Characteristics N Channel( Tj=25 C Unless otherwise specified)
Total Gate Charge
RDS(ON)
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
36
42
18
5
10
10
6
32
10
1670
160
117
m
nC
nS
pF
8
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current (Tj=70 )
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS/ Tj
Ω
VGS=0V
VDS=25V
f=1.0MHz
VDD=30V
ID=1A
VGS=10V
RG=3.3
RD=30
Ω
Ω
ID=5A
VDS=48V
VGS=4.5V
VGS=10V, ID=5A
VGS=4.5V, ID=3A
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
2
Forward Transconductance
Gfs
S
VDS=10V, ID=4A
_
_
_
2670
2
2
C
o
C
o
o
29
IDSS
60
0.04
60V,V
48V,V
1.0
3.0
100
1
25
±
V
V/
Reference to 25C, ID=1mA
o
oC
V
nA
uA
uA
VGS(th)
IGSS
VGS=0V, ID=250uA
VGS= 20V
±
VDS=
GS
=0
VDS=
GS
=0
VDS=VGS, ID=250uA
_
_
_
_
_
_
_
_
_
_
_
01-Jun-2002 Rev. A
Page 2 of 7
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
≦
≦
3.Surface mounted on 1 in2copper pad of FR4 board; 135 C/W when mounted on Min. copper pad.
o
Elektronische Bauelemen
Enhancement Mode Power Mos.FET
te
SSG4575
N Channel 6A, 60V,RDS(ON) 36m
P Channel -4.2A, - 60V,RDS(ON) 72m
Ω
Ω
Source-Drain Diode
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
VDS
_
_
IS=1.7A
Is= 5A, V
34
48
, VGS=0V.
V
nC
nS
1.2
Reverse Recovery Time
Reverse Recovery Charge
GS
=0V
_
_
_
_
Trr
Qrr
dl/dt=100A/uS
2
2



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