Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Spanish  ▼
ALLDATASHEET.ES

X  

Preview PDF HTML

SSG4503 Datasheet(PDF) 3 Page - SeCoS Halbleitertechnologie GmbH

No. de pieza SSG4503
Descripción Electrónicos  Enhancement Mode Power Mos.FET
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de inicio  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSG4503 Datasheet(HTML) 3 Page - SeCoS Halbleitertechnologie GmbH

  SSG4503 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH SSG4503 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH SSG4503 Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH SSG4503 Datasheet HTML 4Page - SeCoS Halbleitertechnologie GmbH SSG4503 Datasheet HTML 5Page - SeCoS Halbleitertechnologie GmbH SSG4503 Datasheet HTML 6Page - SeCoS Halbleitertechnologie GmbH SSG4503 Datasheet HTML 7Page - SeCoS Halbleitertechnologie GmbH  
Zoom Inzoom in Zoom Outzoom out
 3 / 7 page
background image
Electrical Characteristics P-Channel( Tj=25 C Unless otherwise specified)
Total Gate Charge
RDS(ON)
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current (Tj=70 )
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
-30
-0.004
-1.0
100
-1
-25
36
55
15
3
9
12
8
42
34
960
300
220
±
V
V/
V
nA
uA
uA
m
nC
nS
pF
Ω
VGS=0V
VDS=-25V
f=1.0MHz
VDS=-15V
ID=-1A
VGS=-10V
RG=3.3
RD=15
Ω
Ω
ID=-6A
VDS=-24V
VGS=-4.5V
VGS=-10V, ID=-6A
VGS=-4.5V, ID=-4A
VGS=0V, ID=-250uA
VGS= 20V
±
VDS=-30V,VGS=0
VDS=-24V,VGS=0
VDS=VGS, ID=-250uA
Reference to 25 , ID=-1mA
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
2
Forward Transconductance
Gfs
S
5.8
VDS=-10V, ID=-6A
_
_
_
o
C
o
C
o
C
o
C
o
2
2
24
1540
-3.0
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
3 of 7
Elektronische Bauelemente
SSG4503
N Channel 6.9A, 30V,RDS(ON) 28m
Enhancement Mode Power Mos.FET
P Channel -6.3A, -30V,RDS(ON) 36m
Ω
Ω
Source-Drain Diode
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
Reverse Recovery Time
VSD
Trr
_
_
_
_
IS=-6A,VGS=0V.Tj=25 C
o
IS=-6A,VGS=0V
dl/dt=100A/us
V
nS
-1.2
24
2
Reverse Recovery Charge
Qrr
_
_
nC
18
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
≦
≦
3.Surface mounted on 1 inch2 copper pad of FR4 board;135
when mounted on min. copper pad.
°
C/W



Html Pages

1 2 3 4 5 6 7


Datasheet Descarga

Go To PDF Page


Enlace URL



¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Enlace a la hoja de datos    |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com