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SSG4501 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

No. de pieza SSG4501
Descripción Electrónicos  Enhancement Mode Power Mos.FET
PDF  9 Pages
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Fabricante Electrónico  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de inicio  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSG4501 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Electrical Characteristics N Channel( Tj=25 C Unless otherwise specified)
Total Gate Charge
RDS(ON)
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current (Tj=70 )
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
30
0.02
1.0
3.0
100
1
25
28
42
8.4
2.1
4.7
6
5.2
18.8
4.4
645
150
95
±
V
V/
V
nA
uA
uA
m
nC
nS
pF
Ω
VGS=0V
VDS=25V
f=1.0MHz
VDD=15V
ID=1A
VGS=10V
RG=3.3
RD=15
Ω
Ω
ID=7A
VDS=24V
VGS=4.5V
VGS=10V, ID=7A
VGS=4.5V, ID=5A
VGS=0V, ID=250uA
VGS= 20V
±
VDS=30V,VGS=0
VDS=24V,VGS=0
VDS=VGS, ID=250uA
Reference to 25 , ID=1mA
_
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_
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_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
2
Forward Transconductance
Gfs
S
13
VDS=10V, ID=7A
_
_
_
o
C
o
C
o
C
o
C
o
2
2
_
_
Source-Drain Diode
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
Continous Source Current (Body Diode)
VSD
Is
_
_
_
_
IS=7A, VGS=0V.Tj=25 C
VD=VG=0V,VS=1.2V
V
A
1.2
1.67
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
≦
≦
3.Surface mounted on 1 inch2 copper pad of FR4 board;135
when mounted on min. copper pad.
°
C/W
2
o
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 9
Elektronische Bauelemente
SSG
4501
N Channel
7A, 30V,RDS(ON) 28m
Enhancement Mode Power Mos.FET
P Channel -5.3A, -30V,RDS(ON) 5
0m
Ω
Ω



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