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ML74WLAB Datasheet(PDF) 1 Page - Minilogic Device Corporation Limited

No. de pieza ML74WLAB
Descripción Electrónicos  NAND Gate (unbuffered) and NOR Gate (unbuffered)
PDF  4 Pages
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Fabricante Electrónico  MINILOGIC [Minilogic Device Corporation Limited]
Página de inicio  http://www.minilogic.com.hk
Logo MINILOGIC - Minilogic Device Corporation Limited

ML74WLAB Datasheet(HTML) 1 Page - Minilogic Device Corporation Limited

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Rev. B, Sep 2005
CMOS NAND Gate And NOR Gate
Operating Voltage Range : 2V ~ 5.5V
High Speed Operation
: tpd = 2.6ns TYP
Low Power Consumption : 1µ
µ
µ
µA (max)
MSOP-8A Package
■Applications
Palmtops
Digital Equipment
Description
ML74WLABSRG comprises of CMOS NAND gate and NOR gate,
manufactured using silicon gate CMOS processes. The small
quiescent current, which is one of the features of the CMOS logic,
gives way to high speed operations which enables LS-TTL.
With wave forming buffers connected internally, stabilized output
can be achieved as the series offers high noise immunity.
As the series is integrated into a mini molded, MSOP-8A package,
high density mounting is possible.
Features
High Speed Operation
: tpd = 2.6ns TYP (Vcc=5V)
Operating Voltage Range: 2V ~ 5.5V
Low Power Consumption: 1µA (max)
Small Package
: MSOP-8A
Pin Configuration
Function
NAND GATE
INPUT
OUTPUT
A
B
Y
H
H
L
H
L
H
L
H
H
L
L
H
NOR GATE
INPUT
OUTPUT
A
B
Y
H
H
L
H
L
L
L
H
L
L
L
H
H=High level
L=Low level
Absolute Maximum Ratings
Ta=-40°C~85°C
PARAMETER
SYMBOL
RATINGS
UNITS
Power Supply Voltage
Vcc
-0.5 ~ +6.0
V
Input voltage
VIN
-0.5 ~ +6.0
V
Output Voltage
VOUT
-0.5 ~ Vcc +0.5
V
Input Diode Current
IIK
±20
mA
Output Diode current
IOK
±20
mA
Switch Output Current
IOUT
±25
mA
Vcc, GND Current
ICC, IGND
±50
mA
Power Dissipation (Ta=25°C)
Pd
300
mW
Storage Temperature
Tstg
-65 ~ +150
°C
Note: Voltage is all Ground standardized.


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